RJK0230DPA-00#J5A【PDF 2/11 页】MOSFET DL N-CH 25V 20A WPAK

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RJK0230DPA

Preliminary

Electrical Characteristics

? MOS1

(Ta = 25°C)

Item

Drain to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate Resistance

Total gate charge

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Body–drain diode forward voltage

Body–drain diode reverse

Symbol

V (BR)DSS

I GSS

I DSS

V GS(off)

R DS(on)

R DS(on)

|y fs |

Ciss

Coss

Crss

Rg

Qg

Qgs

Qgd

t d(on)

t r

t d(off)

t f

V DF

t rr

Min

25

—

—

1.2

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

—

5.8

8.4

35

1180

252

90

1.0

7.7

3.3

2.0

7.4

4.3

34

5.4

0.83

25

Max

—

±0.1

1

2.5

7.0

10.9

—

1650

—

—

2.2

—

—

—

—

—

—

—

1.08

—

Unit

V

? A

? A

V

m ?

m ?

S

pF

pF

pF

?

nC

nC

nC

ns

ns

ns

ns

V

ns

Test Conditions

I D = 10 mA, V GS = 0

V GS = ±20 V, V DS = 0

V DS = 25 V, V GS = 0

V DS = 10 V, I D = 1 mA

I D = 10 A, V GS = 10 V Note4

I D = 10 A, V GS = 4.5 V Note4

I D = 10 A, V DS = 5 V Note4

V DS = 10 V

V GS = 0

f = 1MHz

V DD = 10 V

V GS = 4.5 V

I D = 20 A

V GS =10 V, I D = 10 A

V DD ? 10 V

R L = 1.0 ?

R g = 4.7 ?

IF = 20 A, V GS = 0 Note4

IF =20 A, V GS = 0

recovery time

Notes: 4. Pulse test

R07DS0541EJ0110 Rev.1.10

Sep 12, 2011

di F / dt = 100 A/ ? s

Page 2 of 10

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